作者：王振浩
单位：广东环境保护工程职业学院，广东佛山 528216
中图分类号：TN322.8        
文献标识码：A       
文章编号：1006-883X(2017)08-0037-04
收稿日期：2017-08-04

摘要：绝缘栅双极晶体管运用广泛，但是要设计出稳定可靠的驱动电路或过流保护电路等一直是个难题。本文对绝缘栅双极型晶体管过流保护进行理论分析，阐述其过流的特点和过流保护的方法，结合实际设计案例进行分析研究与试验，通过试验测试实际使用过流保护电路时存在的问题，了解绝缘栅双极型晶体管过流保护的相关特点。让读者在设计过流保护电路的时候应充分考虑这些特点，选用合适的电子器件，搭建合适的过流保护电路。这对工程设计和工程现场有很好的指导意义。
关键字：绝缘栅双极型晶体管（IGBT）；过流保护；试验；特点

Research and analyses of over-current protection of IGBTs
WANG Zhen-hao
Guangdong Polytechnic of Environmental Protection Engineering, Guangdong Foshan  828216, China
Abstract: Insulated gate bipolar transistors( IGBTs) are used widely. But it is always a difficult problem to design a stable and reliable drive circuit or over-current protection circuit. In this paper, overcurrent protection of IGBT is analyzed  theoretically ,as well as  the characteristics  and protection methods of the over- current. Combined with the actual design cases ,analyses and tests are completed. The problems existing in the practical application of the over-current protection circuit are tested and the related characteristics of the over-current protection of IGBT are understood. When over-current protection circuits are designed, readers should consider these characteristics fully and select the appropriate electronic devices to build suitable over-current protection circuit. This has a good guiding significance for engineering design and engineering field.
Keywords: insulated gate bipolar transistor (IGBT); overcurrent protection; test; characteristics.

备注：2017年 第23卷 第08期